Title :
High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy
Author :
Kishino, Katsumi ; Kikuchi, Akihiko ; Yoshizawa, Masaki ; Fujita, Nobuhiko ; Kushi, Kouichi ; Sasamoto, Hajime
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
Novel growth technologies of III-nitrides for fabricating optical devices by molecular beam epitaxy using RF-plasma excited nitrogen (RF-MBE) were investigated. A relatively high-growth rate, up to 1.4 μm/h of GaN with high-electrical and high-optical quality was obtained. The concept of AlGaN quasi-ternary (QT) compounds, consisting of GaN-AlGaN short period superlattice, was demonstrated and the Al composition was controlled with a shutter control method in the range of 0-0.47. Using the QT technology, a GaN-Al0.07Ga0.933N-Al0.3Ga0.7 N multiquantum-well heterostructure was fabricated to show the effectiveness of the method
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; optical fabrication; semiconductor growth; semiconductor quantum wells; Al composition; GaN-Al0.07Ga0.933N-Al0.3Ga 0.7N multiquantum-well heterostructure; GaN-AlGaN; GaN-AlGaN short period superlattice; GaN-AlGaN superlattice; III-nitrides; RF-plasma excited nitrogen; RF-radical source molecular beam epitaxy; compositional control; growth technologies; high-electrical quality; high-optical quality; high-speed GaN growth; optical device fabrication; quasi-ternary compounds; relatively high-growth rate; shutter control method; Aluminum gallium nitride; Chemical technology; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Nitrogen; Optical control; Optical devices; Paper technology; Semiconductor superlattices;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.704116
