Dual-wavelength laser source monolithically integrated with Y-junction coupler and isolator using quantum-well intermixing

Author

Teng, J.H. ; Chua, S.J. ; Zhang, Z.H. ; Huang, Y.H. ; Li, G. ; Wang, Z.J.

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore

Volume

12

Issue

10

fYear

2000

Firstpage

1310

Lastpage

1312

Abstract

A dual-wavelength laser source monolithically integrated with an isolator and a Y-junction coupler is fabricated by using a new quantum-well intermixing technique. The technique employs a buried Ge layer between the sample surface and the spin-on silica film to control the bandgap tuning in selective areas across a wafer. The integrated isolator can avoid the crosstalk between the two channels of the device. Two distinct lasing wavelengths of 950 and 969 nm are coupled into one single output port through the transparent Y-junction coupler. The two channels have similar threshold current and slope efficiency.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser tuning; optical couplers; optical crosstalk; optical isolators; quantum well lasers; 950 nm; 969 nm; Ge; InGaAs; Y-junction coupler; bandgap tuning; buried Ge layer; crosstalk; distinct lasing wavelengths; dual-wavelength laser source; integrated isolator; isolator; monolithically integrated; quantum-well intermixing; quantum-well intermixing technique; sample surface; single output port; slope efficiency; spin-on silica film; threshold current; transparent Y-junction coupler; Gallium arsenide; Isolators; Laser tuning; Optical coupling; Optical device fabrication; Optical films; Photonic band gap; Quantum well lasers; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.883813

Filename

883813