Title :
A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-μm regime
Author :
Fischer, M. ; Reinhardt, M. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
Abstract :
An all-epitaxial GaInAsN vertical-cavity surface-emitting laser for room-temperature (RT) emission at 1.3 μm was developed by solid-source molecular beam epitaxy using a plasma source for nitrogen activation. RT photopumped operation is demonstrated at a wavelength of 1283 nm. Stimulated emission was observed up to a record high temperature of 143/spl deg/C, resulting in an emission wavelength of 1294 nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; optical fabrication; optical pumping; stimulated emission; surface emitting lasers; 1.3 mum; 1283 nm; 1294 nm; 143 C; GaInAsN; all-epitaxial GaInAsN vertical-cavity surface-emitting laser; emission wavelength; monolithic GaInAsN vertical-cavity surface-emitting laser; nitrogen activation; photopumped operation; plasma source; record high temperature; room-temperature laser emission; solid-source molecular beam epitaxy; stimulated emission; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical pumping; Optical refraction; Optical surface waves; Plasma temperature; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
