Title :
Avalanche photodiodes with an impact-ionization-engineered multiplication region
Author :
Yuan, P. ; Wang, S. ; Sun, X. ; Zheng, X.G. ; Holmes, A.L., Jr. ; Campbell, J.C.
Author_Institution :
Multiplex Inc., South Plainfield, NJ, USA
Abstract :
We demonstrate an impact-ionization-engineered structure for the multiplication region of avalanche photodiodes. By enhancing the control of the impact-ionization position, the structure achieved high gain, low dark current, and very low noise.
Keywords :
avalanche photodiodes; dark conductivity; impact ionisation; optical noise; avalanche photodiodes; high gain; impact-ionization position control; impact-ionization-engineered multiplication region; impact-ionization-engineered structure; low dark current; multiplication region; very low noise; Avalanche photodiodes; Bit rate; Communication system control; Dark current; Gallium arsenide; Heterojunctions; Impact ionization; Optical fiber communication; Semiconductor device noise; Sun;
Journal_Title :
Photonics Technology Letters, IEEE
