Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-μm operation

Author

Cheng Li ; Qinqing Yang ; Hongie Wang ; Jinzhong Yu ; Qiming Wang ; Yongkang Li ; Junming Zhou ; Hui Huang ; Xiaoming Ren

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

12

Issue

10

fYear

2000

Firstpage

1373

Lastpage

1375

Abstract

A back-incident Si/sub 0.65/Ge/sub 0.35//Si multiple quantum-well resonant-cavity-enhanced photodetector operating near 1.3 μm is demonstrated on a separation-by-implantation-oxygen substrate. The resonant cavity is composed of an electron-beam evaporated SiO₂-Si distributed Bragg reflector as a top mirror and the interface between the buried SiO₂ and the Si substrate as a bottom mirror. We have obtained the responsivity as high as 31 mA/W at 1.305 μm and the full width at half maximum of 14 nm.

Keywords

Ge-Si alloys; SIMOX; optical resonators; photodetectors; quantum well devices; semiconductor materials; 1.3 micron; SIMOX substrate; Si/sub 0.65/Ge/sub 0.35/-Si; SiGe-Si multiple quantum well resonant-cavity-enhanced photodetector; SiO/sub 2/ buried layer; SiO/sub 2/-Si; SiO/sub 2/-Si distributed Bragg reflector; back incidence; electron beam evaporation; mirror; Absorption; Distributed Bragg reflectors; Germanium silicon alloys; Mirrors; Photodetectors; Quantum well devices; Reflectivity; Resonance; Silicon germanium; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.883834

Filename

883834