Silicon carbide MEMS for harsh environments

Author

Mehregany, Mehran ; Zorman, Christian A. ; Rajan, Narayanan ; Wu, Chien Hung

Author_Institution

Dept. of Electr. Eng., Case Western Reserve Univ., Cleveland, OH, USA

Volume

86

Issue

8

fYear

1998

fDate

8/1/1998 12:00:00 AM

Firstpage

1594

Lastpage

1609

Abstract

Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review of silicon carbide for microelectromechanical systems (SiC MEMS). Current efforts in developing SiC MEMS to extend the silicon-based MEMS technology to applications in harsh environments are discussed. A summary is presented of the material properties that make SiC an attractive material for use in such environments. Challenges faced in the development of processing techniques are also outlined. Last, a review of the current stare of SiC MEMS devices and issues facing future progress are presented

Keywords

high-temperature effects; micromechanical devices; semiconductor materials; silicon compounds; SiC; harsh environment; high-temperature solid-state electronics; microelectromechanical system; silicon carbide MEMS; transducer; Chemical technology; Chemical transducers; Face; Material properties; Mechanical factors; Microelectromechanical devices; Microelectromechanical systems; Micromechanical devices; Silicon carbide; Solid state circuits;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.704265

Filename

704265