$C$ – $V$ Characteristics in Undoped Gate-All-Around Nanowire FET Array

Presented in this letter are the C-V data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The C-V curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using C-V data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance R_sd. These observed data are compared with the data from planar MOS capacitor.