DocumentCode
1406961
Title
Vacuum-sealed silicon micromachined pressure sensors
Author
Esashi, Masayoshi ; Sugiyama, Susumu ; Ikeda, Kyoichi ; Wang, Yuelin ; Miyashita, Haruzo
Author_Institution
Tohoku Univ., Sendai, Japan
Volume
86
Issue
8
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
1627
Lastpage
1639
Abstract
Considerable progress in silicon pressure sensors has been made in recent years. This paper discusses three types of vacuum-sealed silicon micromachined pressure sensors that represent the present state of the art in this important area. The devices are a capacitive vacuum sensor, a surface-micromachined microdiaphragm pressure sensor, and a resonant pressure sensor. Vacuum sealing for these devices is accomplished using anodic bonding, films deposited using low-pressure chemical vapor deposition, and thermal out-diffusion of hydrogen, respectively. These sensors emphasize high sensitivity, small size, and excellent stability, respectively. The silicon-diaphragm vacuum sensor uses electrostatic force balancing to achieve a wide pressure measurement range
Keywords
elemental semiconductors; micromachining; microsensors; pressure sensors; seals (stoppers); silicon; LPCVD film; Si; anodic bonding; capacitive vacuum sensor; electrostatic force balancing; pressure measurement; resonant pressure sensor; surface-micromachined microdiaphragm pressure sensor; thermal hydrogen out-diffusion; vacuum-sealed silicon micromachined pressure sensor; Bonding; Capacitive sensors; Chemical sensors; Chemical vapor deposition; Electrostatics; Force measurement; Hydrogen; Resonance; Silicon; Stability;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.704268
Filename
704268
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