• DocumentCode
    1406961
  • Title

    Vacuum-sealed silicon micromachined pressure sensors

  • Author

    Esashi, Masayoshi ; Sugiyama, Susumu ; Ikeda, Kyoichi ; Wang, Yuelin ; Miyashita, Haruzo

  • Author_Institution
    Tohoku Univ., Sendai, Japan
  • Volume
    86
  • Issue
    8
  • fYear
    1998
  • fDate
    8/1/1998 12:00:00 AM
  • Firstpage
    1627
  • Lastpage
    1639
  • Abstract
    Considerable progress in silicon pressure sensors has been made in recent years. This paper discusses three types of vacuum-sealed silicon micromachined pressure sensors that represent the present state of the art in this important area. The devices are a capacitive vacuum sensor, a surface-micromachined microdiaphragm pressure sensor, and a resonant pressure sensor. Vacuum sealing for these devices is accomplished using anodic bonding, films deposited using low-pressure chemical vapor deposition, and thermal out-diffusion of hydrogen, respectively. These sensors emphasize high sensitivity, small size, and excellent stability, respectively. The silicon-diaphragm vacuum sensor uses electrostatic force balancing to achieve a wide pressure measurement range
  • Keywords
    elemental semiconductors; micromachining; microsensors; pressure sensors; seals (stoppers); silicon; LPCVD film; Si; anodic bonding; capacitive vacuum sensor; electrostatic force balancing; pressure measurement; resonant pressure sensor; surface-micromachined microdiaphragm pressure sensor; thermal hydrogen out-diffusion; vacuum-sealed silicon micromachined pressure sensor; Bonding; Capacitive sensors; Chemical sensors; Chemical vapor deposition; Electrostatics; Force measurement; Hydrogen; Resonance; Silicon; Stability;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/5.704268
  • Filename
    704268