Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

Author

Sun, Yu-Hsuan ; Cheng, Yun-Wei ; Wang, Szu-Chieh ; Huang, Ying-Yuan ; Chang, Chun-Hsiang ; Yang, Sheng-Chieh ; Chen, Liang-Yi ; Ke, Min-Yung ; Li, Chi-Kang ; Wu, Yuh-Renn ; Huang, JianJang

Author_Institution

Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

Volume

32

Issue

2

fYear

2011

Firstpage

182

Lastpage

184

Abstract

Partial strain relaxation from the light-emitting diode (LED) with surface-textured p-GaN was observed. The textured device possesses less efficiency droop and a higher current level at the efficiency maximum, as compared with the planar one. The results suggest that surface roughening affects not only the external light extraction but also the internal quantum efficiency. Furthermore, the photoluminescent (PL) measurement at low temperature reveals that the percentage increment of the optical power of the textured LED over that of the planar LED becomes lower. In addition to the effect of frozen nonradiative defect states, the PL difference is related to the strain-correlated quantum-confined Stark effect.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; quantum confined Stark effect; quantum optics; surface roughness; surface texture; wide band gap semiconductors; InGaN-GaN; external light extraction; frozen nonradiative defect states; internal quantum efficiency; light emitting diodes; optical power; optical properties; p-type GaN surface texturing; partial strain relaxation; photoluminescent measurement; quantum-confined Stark effect; surface roughening; Light-emitting diode (LED); strain relaxation; surface texturing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2093503

Filename

5671458