Title :
Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors
Author :
Liu, Shou-En ; Yu, Ming-Jiue ; Lin, Chang-Yu ; Ho, Geng-Tai ; Cheng, Chun-Cheng ; Lai, Chih-Ming ; Lin, Chrong-Jung ; King, Ya-Chin ; Yeh, Yung-Hui
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
We investigated the influence of passivation-layer deposition on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (VT) of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be modulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm2/V·s, a threshold voltage of 2.86 V, and an on-off ratio of 108.
Keywords :
gallium compounds; indium compounds; passivation; stress effects; ternary semiconductors; thin film transistors; InGaZnO; field-effect mobility; mechanical stress; passivation layer deposition; thin film transistors; voltage 2.86 V; Amorphous InGaZnO; passivation layer; thin-film transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2091620
