Title :
Memristive and Memcapacitive Characteristics of a Au/Ti–
-InP/InGaAs Diode
Author :
Sun, Jie ; Lind, Erik ; Maximov, Ivan ; Xu, H.Q.
Author_Institution :
Div. of Solid State Phys., Lund Univ., Lund, Sweden
Abstract :
This letter reports on room-temperature electrical measurements of a Au/Ti- HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high- κ oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-κ dielectrics on III-V semiconductors and their potential applications in nanoelectronics.
Keywords :
III-V semiconductors; atomic layer deposition; electron beam lithography; gallium compounds; gold compounds; hafnium compounds; high-k dielectric thin films; indium compounds; memristors; nanoelectronics; semiconductor diodes; Au-Ti-HfO2-InP-InGaAs; III-V semiconductor; atomic layer deposition; bias voltage; diode; electron beam lithography; high- κ oxide/InP interface; high-κ dielectrics; memcapacitive characteristic; memcapacitor; memristive characteristic; memristor characteristic; nanoelectronics; parasitic accumulation layer; rewritable memory cell; room-temperature electrical measurement; High-$kappa hbox{HfO}_{2}$; InP/InGaAs; memcapacitors; memristors; nanoelectronics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2090334