Title :
Effect of emitter layer concentration on the performance of GaAs p +-i homojunction far-infrared detectors: a comparison of theory and experiment
Author :
Shen, Wenzhong ; Perera, A. G Unil ; Francombe, M.H. ; Liu, H.C. ; Buchanan, M. ; Schaff, William J.
Author_Institution :
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA
fDate :
8/1/1998 12:00:00 AM
Abstract :
The performance of GaAs multilayer (p+-i-p+-i-...) homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detectors as a function of emitter layer (p+) concentration is reported. The dark current characteristics have been investigated and compared with a model which includes the space charge, tunneling, and multiple-image-force effects. The experimentally determined detector cutoff wavelength is found to be in reasonable agreement with the high density (HD) theory. The detector responsivity follows well the quantum efficiency predicted by scaling the free carrier absorption coefficient linearly with the doping concentration. All these comparisons are necessary to design and optimize GaAs HIWIP FIR detectors
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; infrared detectors; space-charge-limited conduction; tunnelling; GaAs; dark current characteristics; detector cutoff wavelength; doping concentration; emitter layer concentration; far-infrared detectors; free carrier absorption coefficient; high density theory; homojunction interfacial workfunction internal photoemission; multiple-image-force effects; p+-i homojunction; quantum efficiency; space charge; tunneling; Dark current; Detectors; Finite impulse response filter; Gallium arsenide; High definition video; Nonhomogeneous media; Photoelectricity; Semiconductor process modeling; Space charge; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
