Title :
A Flexible ZnO Nanowire-Based Humidity Sensor
Author :
Hsueh, H.T. ; Hsueh, T.J. ; Chang, S.J. ; Hung, F.Y. ; Hsu, C.L. ; Dai, B.T. ; Lam, K.T. ; Wen, K.H.
Author_Institution :
Inst. of Nanotechnol. & Microsyst. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/2012 12:00:00 AM
Abstract :
In this paper, the authors report the direct growth of ZnO nanowires (NWs) on a flexible substrate by the hydrothermal process and the fabrication of ZnO NW-based humidity sensor. It was found that average length and diameter of the ZnO NWs were 0.6 μm and 50 nm, respectively. It was also found that resistance of the ZnO NWs decreased by 45% as we increased the relative humidity from 52% to 90%. Furthermore, it was found that measured resistance was very stable with negligible fluctuation after 16 days continuous testing.
Keywords :
II-VI semiconductors; fluctuations; humidity sensors; liquid phase deposition; nanofabrication; nanosensors; nanowires; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO; flexible ZnO nanowire-based humidity sensor; flexible substrate; fluctuation; hydrothermal process; resistance; size 0.6 mum to 50 nm; time 16 day; Electrical resistance measurement; Frequency measurement; Humidity; Resistance; Substrates; Temperature measurement; Zinc oxide; Flexible substrate; ZnO nanowires (NWs); humidity sensor;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2011.2168975
