A Flexible ZnO Nanowire-Based Humidity Sensor

Author

Hsueh, H.T. ; Hsueh, T.J. ; Chang, S.J. ; Hung, F.Y. ; Hsu, C.L. ; Dai, B.T. ; Lam, K.T. ; Wen, K.H.

Author_Institution

Inst. of Nanotechnol. & Microsyst. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

11

Issue

3

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

520

Lastpage

525

Abstract

In this paper, the authors report the direct growth of ZnO nanowires (NWs) on a flexible substrate by the hydrothermal process and the fabrication of ZnO NW-based humidity sensor. It was found that average length and diameter of the ZnO NWs were 0.6 μm and 50 nm, respectively. It was also found that resistance of the ZnO NWs decreased by 45% as we increased the relative humidity from 52% to 90%. Furthermore, it was found that measured resistance was very stable with negligible fluctuation after 16 days continuous testing.

Keywords

II-VI semiconductors; fluctuations; humidity sensors; liquid phase deposition; nanofabrication; nanosensors; nanowires; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO; flexible ZnO nanowire-based humidity sensor; flexible substrate; fluctuation; hydrothermal process; resistance; size 0.6 mum to 50 nm; time 16 day; Electrical resistance measurement; Frequency measurement; Humidity; Resistance; Substrates; Temperature measurement; Zinc oxide; Flexible substrate; ZnO nanowires (NWs); humidity sensor;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2011.2168975

Filename

6112160