Effects of transverse doping variations on the transient response of silicon avalanche shaper devices

Author

Jalali, Hamid ; Joshi, Ravindra P. ; Gaudet, John A.

Author_Institution

Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA

Volume

45

Issue

8

fYear

1998

fDate

8/1/1998 12:00:00 AM

Firstpage

1761

Lastpage

1768

Abstract

Two-dimensional (2-D) drift-diffusion simulations were performed to study the transient response of silicon avalanche shaper (SAS) devices that are used in high-power switching and pulse sharpening applications. The role of transverse doping variations on the transient device response has been studied. Our results clearly reveal a potential for filamentary current conduction. The filamentation, however, is shown to be strongly dependent on the transverse doping characteristics, and hence in principle, could he tailored

Keywords

avalanche breakdown; elemental semiconductors; power semiconductor switches; semiconductor device models; semiconductor doping; silicon; transient response; Si; filamentary current conduction; high-power switching; pulse sharpening; silicon avalanche shaper device; transient response; transverse doping; two-dimensional drift-diffusion simulation; Circuits; DC generators; Optical pulse generation; Optical switches; Power semiconductor switches; Semiconductor device doping; Silicon; Synthetic aperture sonar; Transient response; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.704376

Filename

704376