Low-Frequency Noise of nc-Si:H/c-Si Heterojunction Diodes

Author

Dai, M. ; Oh, J.I. ; Shen, W.Z.

Author_Institution

Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai, China

Volume

33

Issue

2

fYear

2012

Firstpage

251

Lastpage

253

Abstract

Low-frequency noise (LFN) measurements were performed on hydrogenated nanocrystalline silicon (nc-Si:H)/crystalline-silicon heterojunction diodes for the forward- and reverse-biased currents I. The 1/f^γ noise with γ ~ 1.3 (for low I) or 0.6 (for high I ) was observed to dominate the LFN, and the noise power spectral density Si showed a power-law behavior (Si ~ I^α, where α ~ 2). This quadratic behavior may indicate the 1/f^γ noise to stem from the carrier number fluctuations mediated by deep trap states (for γ ~ 1.3) or band tail states (for γ ~ 0.6) of nc-Si:H. Also, the band tail width of nc-Si:H was estimated to be ~ 65 meV.

Keywords

1/f noise; elemental semiconductors; hydrogenation; semiconductor diodes; semiconductor heterojunctions; silicon; 1/f noise; LFN measurement; Si:H-Si; crystalline-silicon heterojunction diode; forward-biased current; hydrogenated nanocrystalline silicon; low-frequency noise; noise power spectral density; power-law behavior; reverse-biased current; Current measurement; Heterojunctions; Laboratories; Noise; Noise measurement; Physics; Silicon; $hbox{1}/f$ noise; Band tail states; carrier number fluctuations; deep trap states; hydrogenated nanocrystalline silicon (nc-Si:H);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2176552

Filename

6112175