• DocumentCode
    1407598
  • Title

    Injection currents analysis of p+/n-buffer junction

  • Author

    Chung, Sang-Koo

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Ajou Univ., Suwon, South Korea
  • Volume
    45
  • Issue
    8
  • fYear
    1998
  • fDate
    8/1/1998 12:00:00 AM
  • Firstpage
    1850
  • Lastpage
    1854
  • Abstract
    Injection currents analysis of p+/n buffer junction is presented, taking into account the variation of the carrier lifetime with injection level which allows a unified interpretation of the junction current for all injection levels. The injected carrier density and injection efficiency of the anode are calculated as a function of the current density with the low level lifetime as a parameter for different doping levels of the buffer layer. The analytical results agree well with simulations
  • Keywords
    carrier density; carrier lifetime; current density; doping profiles; p-n junctions; power semiconductor devices; thyristors; anode injected carrier density; anode injection efficiency; buffer layer doping levels; carrier lifetime; current density; injection currents analysis; injection level; junction current; p+/n-buffer junction; CMOS technology; Data mining; Diodes; Leakage current; Photonic band gap; Silicidation; Silicides; Silicon; Temperature dependence; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.704390
  • Filename
    704390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1407598