Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides

Author

Ren, Shen ; Rong, Yiwen ; Claussen, Stephanie A. ; Schaevitz, Rebecca K. ; Kamins, Theodore I. ; Harris, James S. ; Miller, David A B

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

Volume

24

Issue

6

fYear

2012

fDate

3/15/2012 12:00:00 AM

Firstpage

461

Lastpage

463

Abstract

We report a Ge/SiGe quantum well waveguide electroabsorption modulator that is monolithically integrated with silicon-on-insulator waveguides. The active quantum well section is selectively grown on a silicon-on-insulator substrate and has a footprint of 8 . The integrated device demonstrates more than 3.2-dB contrast ratio with 1-V direct voltage swing at 3.5 GHz. We also show the potential of this device to operate in the telecommunication C-band at room temperature.

Keywords

Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; germanium; integrated optics; optical waveguides; quantum well devices; semiconductor quantum wells; silicon-on-insulator; Ge-SiGe; SOI waveguides; Si; contrast ratio; direct voltage swing; electroabsorption modulator; frequency 3.5 GHz; integrated device; monolithically integrated quantum well waveguide modulator; silicon-on-insulator substrate; silicon-on-insulator waveguides; telecommunication C-band; temperature 293 K to 298 K; Optical device fabrication; Optical modulation; Optical waveguides; Photoconductivity; Silicon; Silicon germanium; Germanium quantum well; optical interconnects; optical waveguide modulator; optoelectronics; quantum-confined Stark effect;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2181496

Filename

6112181