Title :
Reevaluation of the ftBVceo limit on Si bipolar transistors
Author :
Ng, Kwok K. ; Frei, Michel R. ; King, Clifford A.
Author_Institution :
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
fDate :
8/1/1998 12:00:00 AM
Abstract :
The Johnson limit predicts that due to fundamental material limitations, the ftBVceo product for Si bipolar transistors cannot exceed 200 GHz-V. Since this limit ignores many practical components, it should not be achievable experimentally. In light of the fact that results reaching this limit have been reported, we have reevaluated such fundamental limits, and have found that this number should be much higher
Keywords :
bipolar transistors; electric breakdown; elemental semiconductors; silicon; Johnson limit; Si bipolar transistors; breakdown voltage; cutoff frequency; ftBVceo product; Bipolar transistors; Breakdown voltage; Cutoff frequency; Diodes; Electric breakdown; Electrons; Equations; Feedback; Heterojunctions; Region 6;
Journal_Title :
Electron Devices, IEEE Transactions on
