• DocumentCode
    1407637
  • Title

    Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC

  • Author

    Li, Hui-feng ; Dimitrijev, Sima ; Harrison, H.Barry

  • Author_Institution
    Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
  • Volume
    19
  • Issue
    8
  • fYear
    1998
  • Firstpage
    279
  • Lastpage
    281
  • Abstract
    This letter demonstrates that the reliability of oxides grown on p-type 4H-SiC can be dramatically improved by NO nitridation. High field (-8 Mv/cm) room-temperature stressing and high-temperature negative-bias (250/spl deg/C, -4 MV/cm) testing were used to investigate the reliability of NO nitrided oxides. Relatively small changes in the flat-band voltage, interface-trap density and leakage current were observed after 5000 s in the case of NO nitrided oxides, while shorter stressing shifted these parameters dramatically in the case of N annealed control samples.
  • Keywords
    MOS capacitors; nitridation; oxidation; semiconductor materials; silicon compounds; 250 C; NO; NO nitridation; SiC-SiO/sub 2/; SiO/sub 2/ oxide growth; flat-band voltage; high field room-temperature stressing; high-temperature negative-bias testing; interface trap density; leakage current; p-type 4H-SiC; reliability; Annealing; Furnaces; Hafnium; MOS capacitors; Oxidation; Silicon carbide; Stress control; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.704399
  • Filename
    704399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1407637