Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification

Author

Crowder, M.A. ; Carey, P.G. ; Smith, P.M. ; Sposili, Robert S. ; Cho, Hans S. ; Im, James S.

Author_Institution

Program in Mater. Sci., Columbia Univ., New York, NY, USA

Volume

19

Issue

8

fYear

1998

Firstpage

306

Lastpage

308

Abstract

Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFTs) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFTs exhibit properties and a level of performance that are superior to polycrystalline Si-based TFTs and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. We attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFTs.

Keywords

MOSFET; crystallisation; directional solidification; elemental semiconductors; laser materials processing; semiconductor growth; semiconductor thin films; silicon; thin film transistors; Si; Si thin films; device active channel; high-performance device characteristics; low-temperature processing; n-channel TFTs; sequential lateral solidification; single-crystal Si TFT; thin-film transistors; Conductive films; Crystallization; Laboratories; Laser sintering; Microstructure; Optical films; Semiconductor films; Substrates; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.704408

Filename

704408