Title :
Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
Author :
Ren, F. ; Kuo, J.M. ; Hong, M. ; Hobson, W.S. ; Lothian, J.R. ; Lin, J. ; Tsai, H.S. ; Mannaerts, J.P. ; Kwo, J. ; Chu, S.N.G. ; Chen, Y.K. ; Cho, A.Y.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
We have demonstrated the first Ga2O3(Gd2O3) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFET´s on InP semi-insulating substrate. Ga2O3(Gd2O3) was electron beam deposited from a high purity single crystal Ga5Gd3O/sub 12/ source. The source and drain regions of the device were selectively implanted with Si to produce low resistance ohmic contacts. A 0.75-μm gate length device exhibits an extrinsic transconductance of 190 mS/mm, which is an order of magnitude improvement over previously reported enhancement-mode InGaAs MISFETs. The current gain cutoff frequency, fT, and the maximum frequency of oscillation, fmax, of 7 and 10 GHz were obtained, respectively, for a 0.75×100 μm2 gate dimension device at a gate voltage of 3 V and drain voltage of 2 V.
Keywords :
III-V semiconductors; MOSFET; UHF field effect transistors; electron beam deposition; gadolinium compounds; gallium arsenide; gallium compounds; indium compounds; ion implantation; microwave field effect transistors; vacuum deposited coatings; 0.75 micron; 10 GHz; 190 mS/mm; 2 V; 3 V; 7 GHz; Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)-InGaAs; Ga/sub 5/Gd/sub 3/O/sub 12/; InGaAs:Si; InP; InP semiinsulating substrate; Si implantation; current gain cutoff frequency; electron beam deposited oxides; enhancement-mode; extrinsic transconductance; gate dielectric; insulated gate FET; low resistance ohmic contacts; maximum frequency of oscillation; n-channel MOSFET; single crystal Ga/sub 5/Gd/sub 3/O/sub 12/ source; Contact resistance; Cutoff frequency; Electron beams; Indium gallium arsenide; Indium phosphide; Insulation; MISFETs; Ohmic contacts; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
