Performance of low-loss RF MEMS capacitive switches

Author

Goldsmith, Charles L. ; Yao, Zhimin ; Eshelman, Susan ; Denniston, David

Author_Institution

Raytheon Syst. Corp., Dallas, TX, USA

Volume

8

Issue

8

fYear

1998

fDate

8/1/1998 12:00:00 AM

Firstpage

269

Lastpage

271

Abstract

`This letter details the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies. These shunt switches possess a movable metal membrane which pulls down onto a metal/dielectric sandwich to form a capacitive switch. These switches exhibit low loss (<0.25 dB at 35 GHz) with good isolation (35 dB at 35 GHz). These devices possess on-off capacitance ratios in the range of 80-110 with a cutoff frequency (figure of merit) in excess of 9000 GHz, significantly better than that achievable with electronic switching devices

Keywords

capacitance; micromechanical devices; switches; 0.25 dB; 35 GHz; cutoff frequency; electronic switching device; figure of merit; isolation; low-loss RF MEMS capacitive switch; metal membrane; metal/dielectric sandwich; microwave frequency; millimeter-wave frequency; on-off capacitance ratio; shunt switch; Aluminum; Biomembranes; Coplanar transmission lines; Electrodes; Micromechanical devices; Microswitches; Microwave devices; Radio frequency; Radiofrequency microelectromechanical systems; Switches;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.704410

Filename

704410