Transient analysis of collector current collapse in multifinger HBT´s

Author

Dhondt, F. ; Barrette, J. ; Rolland, P.A.

Author_Institution

IEM, Villeneuve, France

Volume

8

Issue

8

fYear

1998

fDate

8/1/1998 12:00:00 AM

Firstpage

272

Lastpage

274

Abstract

The authors report for the first time a time-domain analysis of thermal instability in multifinger heterojunction bipolar transistors (HBT´s). This is based on a transient quasi-three-dimensional (3-D) electrothermal model that selfconsistently solves the thermal and electrical equations. This model is designed to evaluate the thermal time constant of GaAs-based power HBT´s employing emitter thermal shunt and emitter ballast resistance

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; time-domain analysis; transient analysis; GaAs; GaAs power HBT; collector current collapse; emitter ballast resistance; emitter thermal shunt; heterojunction bipolar transistor; multifinger HBT; quasi-three-dimensional electrothermal model; thermal instability; thermal time constant; time-domain analysis; transient analysis; Current density; Electric resistance; Electronic ballasts; Electrothermal effects; Equations; Heterojunction bipolar transistors; Temperature distribution; Thermal conductivity; Thermal resistance; Transient analysis;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.704411

Filename

704411