DocumentCode :
1407770
Title :
A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior
Author :
Baric, A. ; McNally, Patrick J.
Author_Institution :
Zagreb Univ., Croatia
Volume :
41
Issue :
3
fYear :
1998
fDate :
8/1/1998 12:00:00 AM
Firstpage :
219
Lastpage :
223
Abstract :
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action. The authors consider here a simple one-dimensional (1-D) model for GaAs MESFETs, which avoids more confusing numerical modeling schemes, yet still facilitates an analysis of the physical functionality of the device. The model takes into account current saturation due to either velocity saturation or channel pinch-off, the modulation of effective gate length and the series resistance of the regions beyond the gate. The results of the model have been compared to experimental data readily obtained from the literature, and the agreement has been shown to be good
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 1-D model; GaAs; GaAs MESFET behavior; channel pinch-off; current saturation; effective gate length modulation; metal-semiconductor field effect transistor; physical functionality analysis; series resistance; velocity saturation; Doping; Electron mobility; Equations; FETs; Gallium arsenide; MESFETs; Numerical models; Physics; Schottky barriers; Voltage;
fLanguage :
English
Journal_Title :
Education, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9359
Type :
jour
DOI :
10.1109/13.704550
Filename :
704550
Link To Document :
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