Title :
Pseudo-exponential function for MOSFETs in saturation
Author :
Chang, Cheng-Chieh ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
11/1/2000 12:00:00 AM
Abstract :
In this paper, according to the Taylor´s series expansion, two pseudo-exponential circuits were realized. The proposed circuits provide a simple method to synthesize pseudo-exponential circuits. Both of the circuits were composed of MOS transistors operating in saturation. One of the pseudo-exponential function circuits is voltage-mode and was tested using discrete components. The other one is current-mode, which is verified with the 0.8 μm CMOS process by Hspice simulations. The results confirm the feasibility of the proposed circuits.
Keywords :
MOSFET circuits; SPICE; current-mode circuits; series (mathematics); 0.8 micron; CMOS process; HSPICE simulation; MOSFET; Taylor series expansion; current-mode circuit; pseudo-exponential function; saturation; voltage-mode circuit; Bipolar transistors; CMOS process; CMOS technology; Circuit simulation; Circuit synthesis; Circuit testing; Dynamic range; MOSFETs; Medical simulation; Threshold voltage;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
