DocumentCode
1408324
Title
Field emission from metal-coated silicon tips
Author
Branston, D.W. ; Stephani, D.
Author_Institution
Siemens AG Corp. Res. & Dev., Erlangen, Germany
Volume
38
Issue
10
fYear
1991
fDate
10/1/1991 12:00:00 AM
Firstpage
2329
Lastpage
2333
Abstract
Microfabrication processes previously described by D. Stephani and J. Eibl (1989) were refined and used to fabricate silicon tips coated with layers of titanium, tantalum, or platinum using physical vapor deposition techniques. The emphasis was upon creating tips with a large ratio of length to diameter. The emission properties of various groupings of emitters thus formed were investigated using an accurately positioned counterelectrode. The counterelectrode was made of tungsten coated with nickel and had a well-defined tip geometry. Measurements were performed on individual groups of one, four, or nine field emitters. Fowler-Nordheim plots were made for a variety of coating materials, emitter-to-electrode spacings, and tip geometries. It is concluded that, for many applications, tip optimization should not be aimed solely at the achievement of high field strengths but that the emitting area should also be as large as possible
Keywords
electron field emission; elemental semiconductors; silicon; vacuum microelectronics; vapour deposited coatings; Fowler-Nordheim plots; Pt-Si; Ta-Si; Ti-Si; coating materials; counterelectrode; emission properties; emitter-to-electrode spacings; emitting area; groupings of emitters; high field strengths; physical vapor deposition; tip geometries; tip optimization; Counting circuits; Electrodes; Geometry; Magnetic field measurement; Performance evaluation; Resists; Silicon compounds; Sputter etching; Titanium; Wet etching;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.88520
Filename
88520
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