Title :
Fabrication and characterization of lateral field-emitter triodes
Author :
Kanemaru, Seigo ; Itoh, Junji
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
10/1/1991 12:00:00 AM
Abstract :
The author fabricated a field-emitter triode with tungsten electrodes arranged laterally on a quartz glass substrate by using the photolithography and dry etching techniques. The device consists of an array of 170 field-emitter tips with a 10-μm pitch, a columnar gate, and an anode. The emission characteristics followed the Fowler-Nordheim tunneling theory. The mutual conductance was about 0.02 μS at an anode voltage of 300 V. The authors improved the fabrication process to obtain an emitter with an operating voltage of about 100 V
Keywords :
electron field emission; photolithography; sputter etching; triodes; tungsten; vacuum microelectronics; 10 micron; 100 V; 300 V; Fowler-Nordheim tunneling theory; SiO2 substrate; W emitters; anode; characterization; columnar gate; dry etching; emission characteristics; fabrication; field emitter arrays; lateral field-emitter triodes; mutual conductance; operating voltage; photolithography; Anodes; Dry etching; Electrodes; Fabrication; Glass; Lithography; Transconductance; Tungsten; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
