DocumentCode :
1408433
Title :
The methodology of simulating particle trajectories through tunneling structures using a Wigner distribution approach
Author :
Jensen, Kevin L. ; Buot, Felixberto A.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Volume :
38
Issue :
10
fYear :
1991
fDate :
10/1/1991 12:00:00 AM
Firstpage :
2337
Lastpage :
2347
Abstract :
The authors introduce a trajectory methodology to describe elementary space- and time-dependent events in a tunneling process in the resonant tunneling diode (RTD). A methodology for constructing quantum particle trajectories is presented. The trajectories for a RTD are presented and their behavior, as a function of scattering and self-consistency, is shown to be consistent with the steady-state current-voltage/quantum well electron density characteristics of the RTD, and with the response of the RTD to a sudden bias switch. The trajectories also exhibit a conservation-of-energy-like behavior. The trajectory formulation is thus shown to be potentially useful for incorporating into a multidimensional particle Monte Carlo simulation of quantum-based devices in which the tunneling region is small compared to the dimensions of the device
Keywords :
Monte Carlo methods; digital simulation; resonant tunnelling devices; semiconductor device models; tunnel diodes; RTD; Wigner distribution approach; conservation-of-energy-like behavior; current-voltage/quantum well electron density characteristics; multidimensional particle Monte Carlo simulation; particle trajectories through tunneling structures; quantum particle trajectories construction; quantum-based devices; resonant tunneling diode; scattering; self-consistency; simulation; space dependent events; sudden bias switch; time-dependent events; trajectory formulation; trajectory methodology; tunneling process; Boltzmann equation; Diodes; Elementary particle vacuum; Field emitter arrays; Microelectronics; Particle scattering; Quantum mechanics; Resonant tunneling devices; Steady-state; Switches;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.88522
Filename :
88522
Link To Document :
بازگشت