• DocumentCode
    1408433
  • Title

    The methodology of simulating particle trajectories through tunneling structures using a Wigner distribution approach

  • Author

    Jensen, Kevin L. ; Buot, Felixberto A.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    38
  • Issue
    10
  • fYear
    1991
  • fDate
    10/1/1991 12:00:00 AM
  • Firstpage
    2337
  • Lastpage
    2347
  • Abstract
    The authors introduce a trajectory methodology to describe elementary space- and time-dependent events in a tunneling process in the resonant tunneling diode (RTD). A methodology for constructing quantum particle trajectories is presented. The trajectories for a RTD are presented and their behavior, as a function of scattering and self-consistency, is shown to be consistent with the steady-state current-voltage/quantum well electron density characteristics of the RTD, and with the response of the RTD to a sudden bias switch. The trajectories also exhibit a conservation-of-energy-like behavior. The trajectory formulation is thus shown to be potentially useful for incorporating into a multidimensional particle Monte Carlo simulation of quantum-based devices in which the tunneling region is small compared to the dimensions of the device
  • Keywords
    Monte Carlo methods; digital simulation; resonant tunnelling devices; semiconductor device models; tunnel diodes; RTD; Wigner distribution approach; conservation-of-energy-like behavior; current-voltage/quantum well electron density characteristics; multidimensional particle Monte Carlo simulation; particle trajectories through tunneling structures; quantum particle trajectories construction; quantum-based devices; resonant tunneling diode; scattering; self-consistency; simulation; space dependent events; sudden bias switch; time-dependent events; trajectory formulation; trajectory methodology; tunneling process; Boltzmann equation; Diodes; Elementary particle vacuum; Field emitter arrays; Microelectronics; Particle scattering; Quantum mechanics; Resonant tunneling devices; Steady-state; Switches;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.88522
  • Filename
    88522