Title :
Very Low Dark Current CCD Image Sensor
Author :
Bogaart, E.W. ; Hoekstra, W. ; Peters, I.M. ; Kleimann, A. C M ; Bosiers, J.T.
Author_Institution :
R&D Dept., DALSA Prof. Imaging, Eindhoven, Netherlands
Abstract :
Very low dark current in charge-coupled-device image sensors is established by means of multipinned phase combined with vertical antiblooming, so-called all-gates pinning. Hereby, dark-current generation at the surface and diffusion from the bulk are suppressed. Using a conventional 6 times 6 mum2 image pixel with an additional n-type implant, a dark-current level of 1.5 pA/cm2 is obtained at 60degC without loss of optical performance. This means that the pixel dark current is reduced by a factor 80.
Keywords :
CCD image sensors; all-gates pinning; charge-coupled-device image sensors; dark current CCD image sensor; image pixel; Charge coupled devices; Charge-coupled image sensors; Dark current; Image sensors; Implants; Lenses; Microoptics; Optical losses; Pixel; Solid state circuits; All-gates pinning (AGP); charge-coupled-device (CCD) image sensor; dark current; multipinned phase; quantum efficiency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2030642
