DocumentCode :
1408705
Title :
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
Author :
Ventra, Massimiliano Di ; Pershin, Yuriy V. ; Chua, Leon O.
Author_Institution :
Dept. of Phys., Univ. of California San Diego, La Jolla, CA, USA
Volume :
97
Issue :
10
fYear :
2009
Firstpage :
1717
Lastpage :
1724
Abstract :
We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.
Keywords :
capacitors; inductors; memory architecture; circuit elements; memcapacitors; meminductors; memristive systems; memristors; neuromorphic device; pinched hysteretic loop; Circuit simulation; History; Immune system; Memristors; Nanoscale devices; Nonvolatile memory; Organisms; Physics; Thermal resistance; Transistors; Capacitance; dynamic response; hysteresis; inductance; memory; resistance;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2009.2021077
Filename :
5247127
Link To Document :
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