DocumentCode :
1408728
Title :
Optical Channel Waveguide in KTiOAsO 
Crystals Produced by O 
ion Implantation
Author :
Jiao, Yang ; Wang, Lei
Author_Institution :
Sch. of Phys. & Electron., Shandong Normal Univ., Jinan, China
Volume :
30
Issue :
10
fYear :
2012
fDate :
5/15/2012 12:00:00 AM
Firstpage :
1433
Lastpage :
1436
Abstract :
We report on the fabrication and characterization of optical channel waveguide in x-cut KTiOAsO4 crystal produced by photographic masking and following direct O ion implantation at energy of 3.0 MeV and fluence of 5 × 1013 ions/cm2. Positive changes of both and refractive indices (corresponding TM and TE polarized light respectively) in the waveguide region are responsible for light waveguiding. After annealing treatment, the propagation losses of the waveguide could be reduced to 1.2 dB/cm, exhibiting acceptable guiding properties.
Keywords :
annealing; ion implantation; light polarisation; light propagation; optical fabrication; optical losses; optical waveguides; oxygen; potassium compounds; refractive index; KTiOAsO4:O+; TE polarized light; TM polarized light; annealing treatment; electron volt energy 3.0 MeV; ion implantation; optical channel waveguide; photographic masking; propagation losses; refractive indices; x-cut crystals; Crystals; Nonlinear optics; Optical device fabrication; Optical refraction; Optical variables control; Optical waveguides; Particle beam optics; Channel waveguide; KTiOAsO $_{4}$ or KTA crystal; ion implantation; propagation loss;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2011.2181822
Filename :
6112651
Link To Document :
