• DocumentCode
    1408809
  • Title

    Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes

  • Author

    Zhou, Qiugui ; Mcintosh, Dion ; Liu, Han-Din ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    23
  • Issue
    5
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    299
  • Lastpage
    301
  • Abstract
    We report reach-through structure 4H-SiC avalanche photodiodes isolated by proton implantation. These devices achieved low dark current (85 pA at a gain of 1000) and high external quantum efficiency ( 75% at 260 nm).
  • Keywords
    avalanche photodiodes; dark conductivity; ion implantation; silicon compounds; SiC; avalanche photodiodes; dark current; proton implantation isolated separate absorption charge; quantum efficiency; Avalanche photodiode (APD); photodetector;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2101057
  • Filename
    5672575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1408809