Influence of MBE growth and rapid thermal annealing conditions on the electrical properties of normal and inverted AlGaAs/InGaAs pseudomorphic HEMT structures

Author

Kesan, V.P. ; Dodabalapur, Ananth ; Neikirk, D.P. ; Streetman, B.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2440

Abstract

High-quality normal and inverted AlGaAs/InGaAs HEMT (high-electron-mobility transistor) structures have been grown on GaAs substrates by MBE (molecular-beam epitaxy), and the influence of rapid thermal annealing on electrical conduction in the two-dimensional electron gas (2-DEG) has been studied. Both close-contact and enhanced arsenic overpressure annealing have been examined. It has been found that inverted pseudomorphic HEMTs exhibit superior electrical properties with significantly higher sheet carrier concentrations than corresponding normal HEMTs. The unusual degree of thermal stability exhibited by these structures underlines the importance of maintaining high column V overpressures during high-temperature processing of HEMTs and demonstrates the ability of these devices to withstand annealing conditions typically used to activate implants in a self-aligned IC technology

Keywords

III-V semiconductors; aluminium compounds; annealing; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; AlGaAs-InGaAs; GaAs substrates; III-V semiconductors; MBE growth; close contact annealing; electrical conduction; electrical properties; enhanced As overpressure annealing; high-electron-mobility transistor; high-temperature processing; inverted structures; molecular-beam epitaxy; normal structures; pseudomorphic HEMT structures; rapid thermal annealing conditions; self-aligned IC technology; sheet carrier concentrations; thermal stability; two-dimensional electron gas; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; PHEMTs; Rapid thermal annealing; Substrates; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8857

Filename

8857