Quantum well p-channel AlGaAs/InGaAs/GaAs devices for complementary heterostructure FET applications

The low extrinsic transconductance of the p-channel self-aligned gate heterostructure insulated gate FETs (HIGFETs), resulting from low hole mobility and high source resistance, has limited the performance of these devices. Results are presented for such devices fabricated on an AlGaAs/InGaAs/GaAs strained quantum-well structure. Transconductance, transconductance parameter, and maximum drain current as high as 113 mS/mm, 305 mS/V/mm, and 94 mA/mm, respectively, were achieved in 0.8-μm devices at room temperature. At 77 K 181 mS/mm, 800 mS/V/mm, and 180 mA/mm, respectively, were obtained in 1-μm devices. The highest hole field effect mobilities deduced from the device data are 860 and 2815 cm²/V at room temperature and 77 K, respectively. These device parameters are believed to be the best reported to date, suggesting that a viable complementary heterostructure FET technology based on this structure can be realized