Title :
Threshold voltage adjustable GaAs FET for VLSI
Author :
Diskus, C.G. ; Lubke, K. ; Lettenmayr, H.W. ; Palmetshofer, L. ; Thim, H.W.
Author_Institution :
Inst. fur Mikroelektron., Linz Univ., Austria
Abstract :
The concept of externally adjusting the threshold voltage of a quasiMISFET by means of a second specially structured gate located underneath the channel is proposed and has been verified experimentally. The new concept should allow fabrication of III-V compound semiconductor integrated circuits with relaxed threshold voltage uniformity requirements. Using this transistor the radiation of the direct-coupled FET logic (DCFL) is possible.
Keywords :
III-V semiconductors; VLSI; field effect integrated circuits; field effect transistors; gallium arsenide; integrated logic circuits; logic gates; GaAs-AlGaAs; III-V compound; VLSI; direct-coupled FET logic; logic gate; quasiMISFET; semiconductor integrated circuits; threshold voltage adjustable FET; threshold voltage uniformity requirements; ultrahigh-speed DCFL gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910265
