Design Considerations for Differential Low-Level Junction FET Commutators

The many advantages of junction field-effect transistors (FET) in commutation applications have prompted a serious effort to extend the technology without sacrificing performance and, in many areas, to realize an improvement over low-level commutator performance attainable by more conventional electronic means (especially Bright switches), so that these devices may be employed in general application, high-accuracy, low-level commutation. This paper is devoted to a generalization of knowledge recently gained during the development of such equipment, which will aid potential designers and users in their understanding and application of low-level FET commutators. A discussion of device characteristics is offered as the starting point of design. A number of topics are then discussed, including offset drift and scatter, gain drift and scatter, source and amplifier loading, crosstalk, and common-mode rejection. Also, several useful design guidelines, in the form of generalized expressions, are derived or furnished for the reader´s use. Finally, in order to lend veracity to the design techniques suggested, the performance data of a low-level FET commutator developed following these techniques are offered for consideration.