DocumentCode :
1409406
Title :
A 1.3 GHz SOI CMOS test chip for low-power high-speed pulse processing
Author :
Berger, Robert ; Lyons, W. Gregory ; Soares, Antonio
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Volume :
33
Issue :
8
fYear :
1998
fDate :
8/1/1998 12:00:00 AM
Firstpage :
1259
Lastpage :
1261
Abstract :
A test chip has been fabricated in a fully depleted SOI CMOS process with 0.25-μm drawn gate length, It successfully demonstrates the types of circuits required to perform digital filtering, detection, and data thinning functions at high clock speeds. The test chip contains over 5000 transistors and was clocked at speeds up to 1.3 GHz. A target application for these circuits is a very wideband compressive receiver for real-time spectral analysis, which requires digital signal processing to be performed on a 20-Gb/s data stream formed by digitizing a stream of fast analog pulses. Adjustable high-speed on-chip clocks, input and output registers, and large decoupling capacitors allowed testing of the chip to be performed using an inexpensive, low-speed probe card and a standard wafer prober
Keywords :
CMOS digital integrated circuits; built-in self test; digital signal processing chips; integrated circuit testing; pulse circuits; silicon-on-insulator; 1.3 GHz; 20 Gbit/s; SOI CMOS test chip; clock; compressive receiver; data thinning; decoupling capacitor; detection; digital filtering; digital signal processing; digitization; fully depleted process; low-power high-speed pulse processing; probe card; real-time spectral analysis; register; wafer prober; CMOS process; Circuit testing; Clocks; Digital filters; Digital signal processing chips; Filtering; Performance evaluation; Pulse circuits; Spectral analysis; Wideband;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.705366
Filename :
705366
Link To Document :
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