DocumentCode :
1409611
Title :
Thermoelastic Ultrasonic Actuator With Piezoresistive Sensing and Integrated Through-Silicon Vias
Author :
Griffin, Benjamin A. ; Chandrasekaran, Venkataraman ; Sheplak, Mark
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Univ. of Florida, Gainesville, FL, USA
Volume :
21
Issue :
2
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
350
Lastpage :
358
Abstract :
This paper presents technology development toward the goal of a micromachined acoustic proximity sensor for real-time cavity monitoring of underwater high-speed super-cavitating vehicles. Low-resistance polysilicon-based through-silicon vias (TSVs) have been integrated with the device to enable backside contacts for drive and sense circuitry. The sensor and vias were fabricated in a complementary-metal-oxide-semiconductor compatible process using deep reactive ion etching, producing a 1-mm-diameter composite diaphragm and 20-μm-diameter high-aspect-ratio TSVs on a silicon-on-insulator wafer. The diaphragm incorporates a central resistive heater for thermoelastic actuation and diffused piezoresistors for sensing acoustic pressure perturbations. Electrical, mechanical, and acoustic characterizations of the device indicate a transmitter source level of 50 dB (ref 20 μPa) at an operating frequency of 60 kHz, a flat-bandwidth receiving sensitivity of 0.98 μV/(V · Pa), a flat frequency response over the measured range of 1-20 kHz, a linear response from 60 to 140 dB, negligible leakage current for the junction-isolated diffused piezoresistors (<; 14 pA at -10 V), low interconnect resistance of 14 Ω, and a minimum detectable pressure of 31.9 dB for a 1-Hz bin centered at 60 kHz, at a bias of 9 V.
Keywords :
actuators; cavitation; marine engineering; microsensors; piezoresistive devices; sensors; sputter etching; ultrasonic applications; underwater vehicles; acoustic characterization; acoustic pressure perturbation; backside contact; central resistive heater; complementary-metal-oxide-semiconductor compatible process; composite diaphragm; deep reactive ion etching; diffused piezoresistor; drive circuitry; electrical characterization; flat-bandwidth receiving sensitivity; frequency 1 kHz to 20 kHz; frequency 60 kHz; high-aspect-ratio TSV; junction-isolated diffused piezoresistor; low-resistance polysilicon-based through-silicon vias; mechanical characterization; micromachined acoustic proximity sensor; piezoresistive sensing; realtime cavity monitoring; sense circuitry; silicon-on-insulator wafer; thermoelastic actuation; thermoelastic ultrasonic actuator; underwater high-speed super-cavitating vehicles; Acoustics; Noise; Piezoresistive devices; Resistance; Resistors; Silicon; Through-silicon vias; Diaphragm; microelectromechanical systems (MEMS); proximity sensor; thermoelastic; ultrasonic;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2011.2178114
Filename :
6112785
Link To Document :
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