Stable Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Film for Flexible Nonvolatile Memory Application

Author

Kim, Woo Young ; Lee, Hee Chul

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

33

Issue

2

fYear

2012

Firstpage

260

Lastpage

262

Abstract

In this letter, a formation method for uniform ferroelectric polymer thin film on very rough aluminum foil is introduced, and the performance characteristics of the film are characterized by hysteresis measurements. For a bending radius of 0.6 cm, the remanent polarization, coercive field and internal bias field are equal in a flat state. After bending 500 times repetitively with a bending radius of 1.1 cm, its performance was nearly constant. Therefore, the method proposed in this letter can be useful for the fabrication of high-quality flexible memory devices on a flexible and rough substrate.

Keywords

aluminium; ferroelectric storage; flexible electronics; polymers; random-access storage; Al; bending radius; coercive field; ferroelectric poly(vinylidene fluoride-trifluoroethylene) film; flexible nonvolatile memory application; hysteresis measurement; internal bias field; remanent polarization; rough aluminum foil; uniform ferroelectric polymer thin film; Capacitors; Gold; Performance evaluation; Rough surfaces; Substrates; Surface roughness; Ferroelectric; flexible electronics; flexible memory; surface roughness;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2176910

Filename

6112789