DocumentCode :
1409636
Title :
Stable Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Film for Flexible Nonvolatile Memory Application
Author :
Kim, Woo Young ; Lee, Hee Chul
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Volume :
33
Issue :
2
fYear :
2012
Firstpage :
260
Lastpage :
262
Abstract :
In this letter, a formation method for uniform ferroelectric polymer thin film on very rough aluminum foil is introduced, and the performance characteristics of the film are characterized by hysteresis measurements. For a bending radius of 0.6 cm, the remanent polarization, coercive field and internal bias field are equal in a flat state. After bending 500 times repetitively with a bending radius of 1.1 cm, its performance was nearly constant. Therefore, the method proposed in this letter can be useful for the fabrication of high-quality flexible memory devices on a flexible and rough substrate.
Keywords :
aluminium; ferroelectric storage; flexible electronics; polymers; random-access storage; Al; bending radius; coercive field; ferroelectric poly(vinylidene fluoride-trifluoroethylene) film; flexible nonvolatile memory application; hysteresis measurement; internal bias field; remanent polarization; rough aluminum foil; uniform ferroelectric polymer thin film; Capacitors; Gold; Performance evaluation; Rough surfaces; Substrates; Surface roughness; Ferroelectric; flexible electronics; flexible memory; surface roughness;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2176910
Filename :
6112789
Link To Document :
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