Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

Author

Horio, Kazushige ; Wakabayashi, Akira

Author_Institution

Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan

Volume

47

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2270

Lastpage

2276

Abstract

Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; impact ionisation; semiconductor device models; surface states; 2-D simulations; GaAs; MESFETs; drain voltage; dynamic simulation; hole trapping; impact ionization; kink phenomena; onset voltage; output conductance; potential profiles; space-charge effect; substrate-related kink dynamics; surface states; surface-state effects; Electric breakdown; Energy states; Gallium arsenide; HEMTs; Impact ionization; MESFETs; MOSFETs; Numerical analysis; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.887007

Filename

887007