• DocumentCode
    1409823
  • Title

    Weibull breakdown characteristics and oxide thickness uniformity

  • Author

    Wu, Ernest Y. ; Nowak, Edward J. ; Vollertsen, Rolf-Peter ; Han, L.K.

  • Author_Institution
    Microelectron. Div., IBM Corp., Essex Junction, VT, USA
  • Volume
    47
  • Issue
    12
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    2301
  • Lastpage
    2309
  • Abstract
    In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for both Weibull parameters, namely, the characteristic times and Weibull slopes over a wide range of oxide thicknesses. We report the abnormal characteristics of the Weibull time-to-breakdown distributions and non-Poisson area scaling behavior observed on ultrathin oxides. Two numerical methods using the parameters obtained from two independent sets of experimental results are developed to quantitatively explain these effects in the context of current modulation due to oxide thickness variation. The relationship between time-to-breakdown and charge-to-breakdown distributions has been clarified and established. It is found that without proper treatment of these effects, the use of Weibull slopes at higher failure percentiles can lead to erroneous and pessimistic reliability projection. Furthermore, me perform a detailed full-scale Monte Carlo analysis to evaluate the impact of thickness variation on low-percentile breakdown distributions and their sensitivity to the thickness dependence of the times-to-breakdown and Weibull slopes.
  • Keywords
    Monte Carlo methods; Weibull distribution; electric breakdown; insulating thin films; Weibull breakdown characteristics; Weibull slopes; Weibull time-to-breakdown distributions; characteristic times; current modulation; full-scale Monte Carlo analysis; nonPoisson area scaling behavior; oxide thickness uniformity; oxide thickness variation; reliability projection; Dielectrics; Electric breakdown; Microelectronics; Microscopy; Monte Carlo methods; Performance analysis; Performance evaluation; Research and development; Rough surfaces; Surface roughness;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.887012
  • Filename
    887012