DocumentCode
1409823
Title
Weibull breakdown characteristics and oxide thickness uniformity
Author
Wu, Ernest Y. ; Nowak, Edward J. ; Vollertsen, Rolf-Peter ; Han, L.K.
Author_Institution
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Volume
47
Issue
12
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2301
Lastpage
2309
Abstract
In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for both Weibull parameters, namely, the characteristic times and Weibull slopes over a wide range of oxide thicknesses. We report the abnormal characteristics of the Weibull time-to-breakdown distributions and non-Poisson area scaling behavior observed on ultrathin oxides. Two numerical methods using the parameters obtained from two independent sets of experimental results are developed to quantitatively explain these effects in the context of current modulation due to oxide thickness variation. The relationship between time-to-breakdown and charge-to-breakdown distributions has been clarified and established. It is found that without proper treatment of these effects, the use of Weibull slopes at higher failure percentiles can lead to erroneous and pessimistic reliability projection. Furthermore, me perform a detailed full-scale Monte Carlo analysis to evaluate the impact of thickness variation on low-percentile breakdown distributions and their sensitivity to the thickness dependence of the times-to-breakdown and Weibull slopes.
Keywords
Monte Carlo methods; Weibull distribution; electric breakdown; insulating thin films; Weibull breakdown characteristics; Weibull slopes; Weibull time-to-breakdown distributions; characteristic times; current modulation; full-scale Monte Carlo analysis; nonPoisson area scaling behavior; oxide thickness uniformity; oxide thickness variation; reliability projection; Dielectrics; Electric breakdown; Microelectronics; Microscopy; Monte Carlo methods; Performance analysis; Performance evaluation; Research and development; Rough surfaces; Surface roughness;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.887012
Filename
887012
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