DocumentCode
1409838
Title
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Author
Hisamoto, Digh ; Lee, Wen-Chin ; Kedzierski, Jakub ; Takeuchi, Hideki ; Asano, Kazuya ; Kuo, Charles ; Anderson, Erik ; King, Tsu-Jae ; Bokor, Jeffrey ; Hu, Chenming
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
47
Issue
12
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2320
Lastpage
2325
Abstract
MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0.4Ge0.6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies.
Keywords
Ge-Si alloys; MOSFET; boron; 20 nm; FinFET; Si0.4Ge0.6:B; quasiplanar nature; self-aligned double-gate MOSFET; threshold voltage; ultrathin body device; vertical double-gate MOSFETs; Degradation; Fabrication; FinFETs; Germanium silicon alloys; Immune system; Laboratories; MOSFET circuits; Semiconductor films; Silicon germanium; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.887014
Filename
887014
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