DocumentCode
1409848
Title
TSV Technology for Millimeter-Wave and Terahertz Design and Applications
Author
Hu, Sanming ; Wang, Lei ; Xiong, Yong-Zhong ; Lim, Teck Guan ; Zhang, Bo ; Shi, Jinglin ; Xiaojun Yuan
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Volume
1
Issue
2
fYear
2011
Firstpage
260
Lastpage
267
Abstract
The through silicon via (TSV) technology provides a promising option to realize a compact millimeter-wave (mmW) and terahertz (THz) system with high performance. As the fundamental elements in this system, transmission lines (T-lines) and interconnects are very important and therefore studied in this paper. A TSV-based substrate integrated waveguide (SIW) is also characterized. The results show that, the T-lines and interconnects are viable at frequencies lower than ~150 GHz whereas SIW can operate relatively well up to 300 GHz. In addition, two mmW components, i.e., a hairpin filter and a patch antenna, are designed by the TSV technology. Results of all the above passive components indicate that the low-resistivity silicon is the main cause of the total loss. Afterwards, two novel TSV-based topologies are proposed to efficiently integrate an antenna with active circuits for the mmW and THz applications.
Keywords
integrated circuit interconnections; terahertz wave devices; three-dimensional integrated circuits; TSV technology; TSV-based substrate integrated waveguide; interconnects; millimeter-wave design; terahertz design; through silicon via technology; Antenna-circuit integration; millimeter-wave (mmW); substrate integrated waveguide (SIW); terahertz (THz); through silicon via (TSV);
fLanguage
English
Journal_Title
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-3950
Type
jour
DOI
10.1109/TCPMT.2010.2099731
Filename
5673027
Link To Document