An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

Author

Goo, Jung-Suk ; Choi, Chang-Hoon ; Danneville, François ; Morifuji, Eiji ; Momose, Hisayo Sasaki ; Yu, Zhiping ; Iwai, Hiroshi ; Lee, Thomas H. ; Dutton, Robert W.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

47

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2410

Lastpage

2419

Abstract

Based on an active transmission line concept and two-dimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters (γ, δ, and c) for the drain noise and induced gate noise are calculated. Validity and error analysis for the simulation are discussed by comparing the simulation results with theoretical results as well as measured data.

Keywords

MOSFET; equivalent circuits; semiconductor device models; semiconductor device noise; stochastic processes; Langevin stochastic source term model; active transmission line concept; deep submicron MOSFETs; drain noise; error analysis; high frequency noise performance; high frequency noise simulation; induced gate noise; intrinsic noise parameters; simulation technique; small-signal equivalent circuit; two-dimensional device simulation; Analytical models; Circuit noise; Circuit simulation; Computational modeling; Distributed parameter circuits; Frequency; High performance computing; MOSFETs; Transmission line theory; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.887030

Filename

887030