Modeling of high current density trench gate MOSFET

This paper presents a semianalytical model developed for the ON state (V_G>V_T) of trench gate MOSFETs. It incorporates a more realistic model for the inversion channel region, taking the effects of doping variation, transverse, and longitudinal electric fields including the surface scattering, into consideration. Accurate modeling of the inversion channel region is of paramount importance, especially in the case of low voltage power devices where the inversion channel resistance is a significant portion of the overall resistance. The carrier velocity saturation at high longitudinal electric fields is also taken into account in the formulation of the model. The proposed model is supported by both numerical simulation results using MEDICI and experimental results, which are in good agreement with the results of the model. This can be a useful tool in the design of optimum devices.