DocumentCode :
1410070
Title :
Defect tolerance in VLSI circuits: techniques and yield analysis
Author :
Koren, Israel ; Koren, Zahava
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume :
86
Issue :
9
fYear :
1998
fDate :
9/1/1998 12:00:00 AM
Firstpage :
1819
Lastpage :
1838
Abstract :
Current very-large-scale-integration (VLSI) technology allows the manufacture of large-area integrated circuits with submicrometer feature sizes, enabling designs with several millions of devices. However, imperfections in the fabrication process result in yield-reducing manufacturing defects, whose severity grows proportionally with the size and density of the chip. Consequently, the development and use of yield-enhancement techniques at the design stage, to complement existing efforts at the manufacturing stage, is economically justifiable. Design-stage yield-enhancement techniques are aimed at making the integrated circuit “defect tolerant”, i.e., less sensitive to manufacturing defects. They include incorporating redundancy into the design, modifying the circuit floorplan, and modifying its layout. Successful designs of defect-tolerant chips must rely on accurate yield projections. This paper reviews the currently used statistical yield-prediction models and their application to defect-tolerant designs. We then provide a detailed survey of various yield-enhancement techniques and illustrate their use by describing the design of several representative defect-tolerant VLSI circuits
Keywords :
VLSI; integrated circuit layout; integrated circuit modelling; integrated circuit yield; redundancy; VLSI; defect tolerance; design; floorplan; integrated circuit; layout; redundancy; statistical model; yield enhancement; Circuit faults; Fabrication; Integrated circuit manufacture; Integrated circuit technology; Integrated circuit yield; Manufacturing processes; Process design; Profitability; Pulp manufacturing; Very large scale integration;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.705525
Filename :
705525
Link To Document :
بازگشت