DocumentCode :
1410207
Title :
Electrical Characteristics of Silicon Solar Cells at Low Temperatures
Author :
Kennerud, Kenneth L.
Author_Institution :
Boeing Company, Seattle, Wash.
Issue :
4
fYear :
1967
fDate :
7/1/1967 12:00:00 AM
Firstpage :
586
Lastpage :
590
Abstract :
Experimentally determined values of open-circuit voltage, short-circuit current, and maximum power for p on n and n on p silicon solar cells are presented for temperatures ranging from -196°C to + 50°C under equivalent space sunlight intensities of 58 mW/cm2 and 268 mW/cm2. An anomalous behavior is observed in the n on p cells at low temperatures; namely, the open-circuit voltage becomes nearly independent of temperature below a transition temperature Tt that depends on the sunlight intensity.
Keywords :
Aerospace testing; Boron; Electric variables; Nitrogen; Photovoltaic cells; Regulators; Silicon; Temperature dependence; Temperature distribution; Voltage; Energy conversion; low temperature; p-n junction; photovoltaic device; semiconductor device; silicon; solar cell; solar energy; space power; temperature;
fLanguage :
English
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9251
Type :
jour
DOI :
10.1109/TAES.1967.5408834
Filename :
5408834
Link To Document :
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