Dependently addressable dual-spot native-oxide-confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well lasers

Author

Sun, D. ; Treat, W.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

10

Issue

9

fYear

1998

Firstpage

1214

Lastpage

1216

Abstract

We describe the fabrication and characteristics of 15-μm spaced dual-spot, 670-nm native-oxide confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well ridge waveguide laser diodes. The devices are fabricated from a compressively strained GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well separate confinement heterostructure laser structure. Wet oxidation of Al/sub 0.5/In/sub 0.5/P is used to form native-oxide-confined dual-ridge waveguides. The oxidation process converts part of the p-Al/sub 0.5/In/sub 0.5/P cladding layer into AlO/sub x/ after ridge etching. These diodes show excellent performance: uniform low threshold currents of 15 mA and differential quantum efficiencies over 35%/facet. The diodes show crosstalk less than 2%.

Keywords

III-V semiconductors; aluminium compounds; claddings; gallium compounds; indium compounds; laser transitions; optical fabrication; oxidation; quantum well lasers; ridge waveguides; waveguide lasers; 15 mA; 35 percent; Al/sub 0.5/In/sub 0.5/P; AlO; AlO/sub x/ after ridge etching; GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well ridge waveguide laser diode fabrication; GaInP-AlGaInP; compressively strained; crosstalk; dependently addressable dual-spot native-oxide-confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well lasers; differential quantum efficiencies; native-oxide-confined dual-ridge waveguides; oxidation process; p-Al/sub 0.5/In/sub 0.5/P cladding layer; separate confinement heterostructure laser structure; uniform low threshold currents; wet oxidation; Diode lasers; Etching; Optical crosstalk; Optical device fabrication; Optical interconnections; Optical waveguides; Oxidation; Quantum well lasers; Semiconductor laser arrays; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.705594

Filename

705594