Dependently addressable dual-spot native-oxide-confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well lasers

We describe the fabrication and characteristics of 15-μm spaced dual-spot, 670-nm native-oxide confined GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well ridge waveguide laser diodes. The devices are fabricated from a compressively strained GaInP-(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum-well separate confinement heterostructure laser structure. Wet oxidation of Al/sub 0.5/In/sub 0.5/P is used to form native-oxide-confined dual-ridge waveguides. The oxidation process converts part of the p-Al/sub 0.5/In/sub 0.5/P cladding layer into AlO/sub x/ after ridge etching. These diodes show excellent performance: uniform low threshold currents of 15 mA and differential quantum efficiencies over 35%/facet. The diodes show crosstalk less than 2%.