• DocumentCode
    1410397
  • Title

    High-temperature operation of 650-nm wavelength AlGaInP self-pulsating laser diodes

  • Author

    Summers, H.D. ; Rees, P.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Wales, Cardiff, UK
  • Volume
    10
  • Issue
    9
  • fYear
    1998
  • Firstpage
    1217
  • Lastpage
    1219
  • Abstract
    Low-coherence self-pulsating laser diodes operating at a wavelength of 650 nm and at temperatures in excess of 70/spl deg/C are required for high density optical storage systems. We report on AlGaInP lasers operating at this wavelength which exhibit stable self-pulsation up to a temperature of 100/spl deg/C. The lasers are 50-μm-wide oxide-isolated stripe devices in which the saturable absorption necessary for pulsation is provided by multiple-quantum wells placed within the p-doped cladding layer. The pulsation frequency of the devices increases linearly with increasing drive current and is present up to 1.5 times, lasing threshold.
  • Keywords
    III-V semiconductors; claddings; gallium compounds; indium compounds; laser beam applications; laser transitions; optical saturable absorption; optical storage; quantum well lasers; semiconductor quantum wells; 100 C; 50 mum; 650 nm; AlGaInP; AlGaInP lasers; AlGaInP self-pulsating laser diodes; GaInP; GaInP MQW lasers; drive current; high density optical storage systems; high-temperature operation; lasing threshold; low-coherence self-pulsating laser diodes; multiple-quantum wells; oxide-isolated stripe devices; p-doped cladding layer; pulsation frequency; saturable absorption; stable self-pulsation; Absorption; DVD; Diode lasers; Laser feedback; Laser stability; Optical bistability; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Temperature;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.705595
  • Filename
    705595