DocumentCode :
1410397
Title :
High-temperature operation of 650-nm wavelength AlGaInP self-pulsating laser diodes
Author :
Summers, H.D. ; Rees, P.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Wales, Cardiff, UK
Volume :
10
Issue :
9
fYear :
1998
Firstpage :
1217
Lastpage :
1219
Abstract :
Low-coherence self-pulsating laser diodes operating at a wavelength of 650 nm and at temperatures in excess of 70/spl deg/C are required for high density optical storage systems. We report on AlGaInP lasers operating at this wavelength which exhibit stable self-pulsation up to a temperature of 100/spl deg/C. The lasers are 50-μm-wide oxide-isolated stripe devices in which the saturable absorption necessary for pulsation is provided by multiple-quantum wells placed within the p-doped cladding layer. The pulsation frequency of the devices increases linearly with increasing drive current and is present up to 1.5 times, lasing threshold.
Keywords :
III-V semiconductors; claddings; gallium compounds; indium compounds; laser beam applications; laser transitions; optical saturable absorption; optical storage; quantum well lasers; semiconductor quantum wells; 100 C; 50 mum; 650 nm; AlGaInP; AlGaInP lasers; AlGaInP self-pulsating laser diodes; GaInP; GaInP MQW lasers; drive current; high density optical storage systems; high-temperature operation; lasing threshold; low-coherence self-pulsating laser diodes; multiple-quantum wells; oxide-isolated stripe devices; p-doped cladding layer; pulsation frequency; saturable absorption; stable self-pulsation; Absorption; DVD; Diode lasers; Laser feedback; Laser stability; Optical bistability; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Temperature;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.705595
Filename :
705595
Link To Document :
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