Title :
Broad spectrum InGaAsP edge-emitting light-emitting diode using selective-area metal-organic vapor-phase epitaxy
Author :
Kashima, Yasumasa ; Munakata, Tsutomu
Author_Institution :
Components Div., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
We studied the effects of a composition-changing emission region on the emission spectrum using an InGaAsP multiple-quantum-well edge-emitting light-emitting diode (ELED). The ELED was fabricated by selective-area growth using a gradually changing mask stripe width. The spectral half-width exceeded 120 nm at an ambient temperature of 25/spl deg/C, offering a wider spectrum than that of conventional light-emitting diodes.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 25 C; InGaAsP; LED; ambient temperature; broad spectrum InGaAsP edge-emitting light-emitting diode; changing mask stripe width; composition-changing emission region; emission spectrum; selective-area growth; selective-area metal-organic vapor-phase epitaxy; spectral half-width; wider spectrum; Absorption; Epitaxial growth; Light emitting diodes; Optical device fabrication; Optical feedback; Optical fiber communication; Optical fiber sensors; Quantum well devices; Stimulated emission; Temperature sensors;
Journal_Title :
Photonics Technology Letters, IEEE
