Broad spectrum InGaAsP edge-emitting light-emitting diode using selective-area metal-organic vapor-phase epitaxy

Author

Kashima, Yasumasa ; Munakata, Tsutomu

Author_Institution

Components Div., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

10

Issue

9

fYear

1998

Firstpage

1223

Lastpage

1225

Abstract

We studied the effects of a composition-changing emission region on the emission spectrum using an InGaAsP multiple-quantum-well edge-emitting light-emitting diode (ELED). The ELED was fabricated by selective-area growth using a gradually changing mask stripe width. The spectral half-width exceeded 120 nm at an ambient temperature of 25/spl deg/C, offering a wider spectrum than that of conventional light-emitting diodes.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 25 C; InGaAsP; LED; ambient temperature; broad spectrum InGaAsP edge-emitting light-emitting diode; changing mask stripe width; composition-changing emission region; emission spectrum; selective-area growth; selective-area metal-organic vapor-phase epitaxy; spectral half-width; wider spectrum; Absorption; Epitaxial growth; Light emitting diodes; Optical device fabrication; Optical feedback; Optical fiber communication; Optical fiber sensors; Quantum well devices; Stimulated emission; Temperature sensors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.705597

Filename

705597